AG ASSOCIATES MINIPULSE 310 RAPID THERMAL PROCESSOR

Features and Applications

Manually loaded and capable of processing silicon and III-V substrates up to 75mm in diameter, Minipulse 310 provides solutions to your process development and monitoring needs. Equipped with a graphical user interface to improve operator productivity, Minipulse 310 offers recipe management and system diagnostics.

Major System Features

  • Semiconductor grade quartz process chamber
  • 21 tungsten halogen lamps in an upper and lower array
  • Extended Range Pyrometer: 400°C -1300oC (200°C w/TC)
  • Graphical User Interface(GUI)
  • Rebuilt to OEM specs- will look like new system

These capabilities, combined with the heating chamber’s cold-wall design and
superior heating uniformity, provide significant advantages over conventional
furnace processing.

Key Features Include

  • Closed-loop temperature control with pyrometer or thermocouple temperature sensing.
  • Precise time-temperature profiles tailored to suit specific process requirements.
  • Fast heating and cooling rates unobtainable in conventional technologies.
  • Consistent wafer-to-wafer process cycle repeatability.
  • Elimination of external contamination.
  • Small footprint and energy efficiency.

Performance Specifications

  • Recommended Steady State Temperature Range: 400-1250° C.
  • Steady-State Temperature Stability: ± 2° C.
  • Temperature Monitoring Mechanisms: Extended Range Pyrometer (ERP), used throughout the recommended temperature range, or a thermocouple, used for process temperatures below 400° C.
  • Heating Rate: 1-200° C per second, user-controllable.
  • Cooling Rate: Temperature dependent; max 150° C per second.
  • Maximum Non-uniformity:
  • ±5°C across a 6″ (150mm) wafer at 1150°C. (This is a one sigma deviation 100 angstrom oxide.) For a titanium silicidation process, no more than 4% increase in non-uniformity during the first anneal at 650°C to 700 °C.
  • Post-anneal sheet resistivity measured on a 150mm wafer annealed at 1100° C for 10 seconds. R&D models optimized for slip control.
  • Implant: As 1E16 50 KeV with implant uniformity ≤0.3%
  • Lamp Life: Unconditionally guaranteed for three years.
  • Steady State Time: 1-9999 sec. (1-600 sec. recommended)
  • Wafer Sizes for the HEATPULSE 610: 2″, 3″, 4″, 5″ and 6″.
  • Process Gases: The HEATPULSE system delivers one non-corrosive process gas with manually controlled flow. Optional MFC, Up to 4.
  • GUI software Standard , upgrade to P-CAT
  • 16 bit A/D

Process

Role of RTP

Anneal Oxidation Form a uniform layer of silicon dioxide to insulate a circuit element
Silicidation Decrease the resistivity of tungsten silicide or titanium silicide caps on polycrystalline device gates
Nitridization Form a silicon nitride layer for insulation, protection against oxidation, or anti-reflective coatings
BSPG Reflow Improve the surface characteristics such as uniformity for boron phosphorous spin on glass (BPSG). Also called densification
Ion Activation Cause implanted ions such as arsenic and boron to integrate into the silicon crystal lattice to improve surface conductivity
Platinum Sintering Form a thermionic bond between platinum and silicon to increase the current-carrying capability of a circuit
Salicidation Self-aligning Silicidation. Increase the conductivity of refractory metal silicides used to connect gate material to metallic vias. Similar to Silicidation

Warranty

Engineering Solutions LLC’s expressly warrants a warranty of 12 months Standard with all heatpulse sales.

Options

Extended Warranty: 12, and 24 additional months

Research wafer trays available for either Si or GaAs in 2″, 3″, 4″, 5″ and 6”
sizes; GaAs Susceptors; and Slip-Free Rings.

Customization

Replacement Quartzware

REQUEST QUOTE HERE