AG ASSOCIATES HEATPULSE 610 RAPID THERMAL PROCESSOR
Features and Applications
Manually loaded and capable of processing silicon and III-V substrates up to 150mm in diameter, Heatpulse 610 provides solutions to your process development and monitoring needs. Equipped with a graphical user interface to improve operator productivity, Heatpulse 610 offers recipe management and system diagnostics.
Major System Features
- Semiconductor grade quartz process chamber
- 21 tungsten halogen lamps in an upper and lower array
- Extended Range Pyrometer: 400°C -1300oC (200°C w/TC)
- Graphical User Interface(GUI)
- Rebuilt to OEM specs- will look like new system
These capabilities, combined with the heating chamber’s cold-wall design and
superior heating uniformity, provide significant advantages over conventional
furnace processing.
Key Features Include
- Closed-loop temperature control with pyrometer or thermocouple temperature sensing.
- Precise time-temperature profiles tailored to suit specific process requirements.
- Fast heating and cooling rates unobtainable in conventional technologies.
- Consistent wafer-to-wafer process cycle repeatability.
- Elimination of external contamination.
- Small footprint and energy efficiency.
Performance Specifications
- Recommended Steady State Temperature Range: 400-1250° C.
- Steady-State Temperature Stability: ± 2° C.
- Temperature Monitoring Mechanisms: Extended Range Pyrometer (ERP), used throughout the recommended temperature range, or a thermocouple, used for process temperatures below 400° C.
- Heating Rate: 1-200° C per second, user-controllable.
- Cooling Rate: Temperature dependent; max 150° C per second.
- Maximum Non-uniformity:
- ±5°C across a 6″ (150mm) wafer at 1150°C. (This is a one sigma deviation 100 angstrom oxide.) For a titanium silicidation process, no more than 4% increase in non-uniformity during the first anneal at 650°C to 700 °C.
- Post-anneal sheet resistivity measured on a 150mm wafer annealed at 1100° C for 10 seconds. R&D models optimized for slip control.
- Implant: As 1E16 50 KeV with implant uniformity ≤0.3%
- Lamp Life: Unconditionally guaranteed for three years.
- Steady State Time: 1-9999 sec. (1-600 sec. recommended)
- Wafer Sizes for the HEATPULSE 610: 2″, 3″, 4″, 5″ and 6″.
- Process Gases: The HEATPULSE system delivers one non-corrosive process gas with manually controlled flow. Optional MFC, Up to 4.
- GUI software Standard , upgrade to P-CAT
- 16 bit A/D
Process |
Role of RTP |
| Anneal Oxidation | Form a uniform layer of silicon dioxide to insulate a circuit element |
| Silicidation | Decrease the resistivity of tungsten silicide or titanium silicide caps on polycrystalline device gates |
| Nitridization | Form a silicon nitride layer for insulation, protection against oxidation, or anti-reflective coatings |
| BSPG Reflow | Improve the surface characteristics such as uniformity for boron phosphorous spin on glass (BPSG). Also called densification |
| Ion Activation | Cause implanted ions such as arsenic and boron to integrate into the silicon crystal lattice to improve surface conductivity |
| Platinum Sintering | Form a thermionic bond between platinum and silicon to increase the current-carrying capability of a circuit |
| Salicidation | Self-aligning Silicidation. Increase the conductivity of refractory metal silicides used to connect gate material to metallic vias. Similar to Silicidation |
Warranty
Engineering Solutions LLC’s expressly warrants a warranty of 12 months Standard with all heatpulse sales.
Options
Extended Warranty: 12, and 24 additional months
Research wafer trays available for either Si or GaAs in 2″, 3″, 4″, 5″ and 6”
sizes; GaAs Susceptors; and Slip-Free Rings.
Customization
Replacement Quartzware